Transistors

The Toshiba TK100E10N1 is a single N-channel enhancement mode power MOSFET manufactured using Toshiba’s U-MOSⅧ-H process, housed in a standard TO-220 through-hole package. This device features extremely low on-resistance (typical value 2.8mΩ, maximum 3.4mΩ) and high current handling capability (continuous drain current up to 207A), making it very suitable for switching voltage regulators, synchronous rectification, DC-DC converters, and other high-efficiency power conversion circuits.