Discrete Semiconductors
Showing 31–39 of 39 results
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IGBTs, Single IGBTs
ST STGWA80H65DFB
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new “HB”
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.SKU: n/a -
FETs, MOSFETs, Transistors
Toshiba TK100E10N1| N-Channel Power MOSFET – 100V, 207A, TO-220
The Toshiba TK100E10N1 is a single N-channel enhancement mode power MOSFET manufactured using Toshiba’s U-MOSⅧ-H process, housed in a standard TO-220 through-hole package. This device features extremely low on-resistance (typical value 2.8mΩ, maximum 3.4mΩ) and high current handling capability (continuous drain current up to 207A), making it very suitable for switching voltage regulators, synchronous rectification, DC-DC converters, and other high-efficiency power conversion circuits.
SKU: n/a
