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ST STGWA80H65DFB

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This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new “HB”
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.

₨900.00 ₨1,000.00

Out of stock

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Introduction

AI Translation

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

AI Translation
  • Maximum junction temperature: TJ = 175 ℃ High speed switching series
  • Minimized tail current
  • VCE(sat) = 1.6 V (typ.) @ 80 A Tight parameter distribution Safe paralleling
  • Low thermal resistance Very fast soft recovery antiparallel diode

Applications

AI Translation
  • Photovoltaic inverters
  • High frequency converters
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