Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Td(off) | 280ns | |
| Pd – Power Dissipation | 469W | |
| Td(on) | 84ns | |
| Current – Collector(Ic) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 215pF | |
| IGBT Type | – |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2V@80A,15V | |
| Collector Cut-Off Current (Ices) | – | |
| Reverse Recovery Time(trr) | 85ns | |
| Switching Energy(Eoff) | 1.5mJ | |
| Turn-On Energy (Eon) | 2.1mJ | |
| Input Capacitance(Cies) | 10.524nF | |
| Output Capacitance(Coes) | 385pF | |
| Gate Charge(Qg) | 414nC@15V |
Introduction
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Features
- Maximum junction temperature: TJ = 175 ℃ High speed switching series
- Minimized tail current
- VCE(sat) = 1.6 V (typ.) @ 80 A Tight parameter distribution Safe paralleling
- Low thermal resistance Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- High frequency converters








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